Manufactoring processes of the transistors

The manufacture of the devices to semiconductor includes the various operations allowing the development of the electronics components having for base of the materials semiconductors. In this category various types of components return, a first approach already makes it possible to differentiate the discrete components (providing only one single function, diodes, transistors,…) integrated circuits which consist of an assembly of several discrete microcomponents on a single substrate to give what one generally names “electronic chip” or " chip".

Introduction

A transistor is in fact a barrier of potential which one makes busy (conducting) or Isolant E for a tension given to the current. In a diagrammatic way from the point of view of data processing, one makes correspond passer by to bit 1 and insulator with bit 0. The transistor is in fact a hardware device multi-layer makes of 3 electrodes separated by 3 pieces of silicon the first negatively doped the second lower thickness doped positively and the third doped negatively standard NPN or standard reverse PNP. Doping is obtained by addition of impurities to valence positive or negative i.e. which can provide or accept easily an electron. One manages the electrons as well as the lacks of electron or hole.

Epitaxy by molecular Jets

The materials semiconductors require a great crystalline quality, i.e. one needs less impurities possible. To obtain this great quality, a method used is to carry out layers of materials semiconductors under ultra-high vacuum (10^-10 Torr). This kind of vacuum is obtained in a frame of epitaxy by molecular jets. This frame in general consists of 3 rooms in which the vacuum is improved from one room to another thanks to pumps increasingly elaborate (diaphragm pump, pumps turbo-molecular, ionic pump, titanium filament). It is thus the last room, which is the room of growth which has the best empty one. In this room, the support which will use to carry out the component (in the case of a laser diode, it can be a support of GaSb), dealt with various cells filled with elements being used to carry out semiconductors (elements III or V of the table of Mendeleiev, for example). These cells are strongly heated so that the material can be sent on the support in gas form. It is thus for that the ultra-high vacuum is necessary: the particle sent on the support will not interact with another parasitic molecule.

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